1 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com 1SS420 1SS420 silicon epitaxial planar schottky barrier diode for high speed switching application absolute maxim um ratings (t a = 25 o c) parameter symbol value unit peak reverse voltage v rm 35 v reverse voltage v r 30 v average forward current i f(av) 200 ma peak forward current i fm 300 ma power dissipation p tot 150 mw surge current (10 ms) i fsm 1 a junction temperature t j 125 o c operating temperature range t opr - 40 to + 100 o c storage temperature t stg - 55 to + 125 o c characteristics at t a = 25 o c parameter symbol typ. max. unit forward voltage at i f = 200 ma v f - 0.6 v reverse current at v r = 30 v i r - 5 a total capacitance at v r = 0 v, f = 1 mhz c t 20 - pf anode 2 top view marking code: " ** " simplified outline sod-523 and symbol 1 ** 2 pinning 1 pin cat hode description a l l d a t a s h e e t
2 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com 1SS420 1SS420 a l l d a t a s h e e t
package outline plastic surface mounted package; 2 leads sod-523 mm a e b a c unit p d a b cde h v h all round e e p 0.70 0. 6 0 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 5 o 3 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com 1SS420 1SS420 a l l d a t a s h e e t
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